Manufacturer Product Number:
IPI023NE7N3 G
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI023NE7N3 G-DG
Description:
MOSFET N-CH 75V 120A TO262-3
Detailed Description:
N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
Inventory:
12802867
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IPI023NE7N3 G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI023N
Datasheet & Documents
Datasheets
Additional Information
Other Names
IFEINFIPI023NE7N3 G
2156-IPI023NE7N3 G-IT
IPI023NE7N3 G-DG
IPI023NE7N3G
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPP023NE7N3GXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
460
DiGi PART NUMBER
IPP023NE7N3GXKSA1-DG
UNIT PRICE
2.96
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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